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    Spin-orbit and topological contributions to magnetic anisotropy in monolayer V2WS4

    Bing Wang1, Yihang Bai1, Changgeng Li1, Shuyuan Liu1, Fengzhu Ren1, Chongze Wang2,*, and Jun-Hyung Cho1,†

    • 1Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, China
    • 2Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China

    • *Contact author: chongze@hanyang.ac.kr
    • †Contact author: cho@henu.edu.cn

    Phys. Rev. B 113, 064419 – Published 13 February, 2026

    DOI: https://doi.org/10.1103/ldvf-6qnr

    Abstract

    Two-dimensional magnetic topological insulators, such as monolayer V2WS4, are promising platforms for realizing the quantum anomalous Hall (QAH) effect, with high Curie temperatures and large perpendicular magnetic anisotropy energies (MAEs). Using first-principles density functional theory calculations, we investigate the microscopic mechanism behind the large MAE in V2WS4. The MAE arises from two key contributions: a spin-orbit coupling (SOC)-driven term, originating from the strong SOC of W 5d orbitals, and a topology-assisted term near the band-inverted region. Both contributions favor out-of-plane magnetization, though they operate through different origins. The SOC-driven contribution arises from the intrinsic relativistic interaction, while the topology-assisted contribution is governed by the spin-orientation dependence of the electronic topology. Specifically, when the magnetization is in-plane, symmetry-protected nodal points near the Fermi level prevent the formation of a global gap. In contrast, out-of-plane magnetization lifts these degeneracies, opening a sizable topological gap with Chern number C=−1, leading to a greater energy separation between the two crossing bands and enhancing the MAE. Additionally, the energy and dispersion of these nodal points vary with the in-plane magnetization direction, introducing an additional anisotropy within the plane. As a result, the total MAE arises from the interplay between the SOC-driven and topology-assisted contributions, with the maximum MAE occurring when the system stabilizes the QAH insulating state with perpendicular magnetization.

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