Elementary magnetic poles in InN/GaN monolayer heterostructure nanowires
Phys. Rev. B 113, 235303 – Published 3 June, 2026
DOI: https://doi.org/10.1103/l3rg-fzc8
Abstract
The existence of an elementary magnetic pole (charge) was predicted by Dirac in 1931 and here we propose and implement semiconductor nanostructures supporting such poles, which are InN/GaN heterostructure nanowires (NWs) with a few monolayer thick InN inclusions, grown using plasma-assisted molecular beam epitaxy. The formation of magnetic pole/charge occurs in this NWs due to piezoelectric effect leading to formation of Wigner quantum dots (WQDs) having magnetoelectron states—Dirac anyons (DAs), created by magnetic flux quanta self-generated in single-particle states, previously observed in self-assembled InP/ WQDs [Mintairov et al., Phys. Rev. B 111, 045410 (2025)]. The formation of WQDs and DAs/magnetic poles having intrinsic magnetic field of several tens of Tesla is evident from the multipeak structure and up to 100% of circular polarization degree of the photoluminescence spectra measured for single NWs. This is supported by the calculations of single-particle states using model and electron density distributions using the configurational interaction approach. The presented results demonstrate the scaling of magnetic pole/Dirac anyon properties with material parameters, which allows the realization of high-temperature magnetic pole structures that can be used in nanophotonics and topological quantum computing applications.