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    Elementary magnetic poles in InN/GaN monolayer heterostructure nanowires

    Alexander M. Mintairov1,2,*, Valery Yu. Axenov1, Valery Yu. Davydov1, Ilya A. Eliseyev1, Alexei S. Vlasov1, Andrey S. Brichkin3, Gregory M. Golishkov3, Alexander V. Chernenko3, Daniele Barettin4,5 et al.

    Steven A. Blundell6, George E. Cirlin7,8,9, Demid A. Kirilenko8, Konstantin P. Kotlyar7,8,9, Rodion R. Reznik7,8,9, Talgat Shugabaev7,8, and Vladislav O. Gridchin7,8,9

    • *Contact author: amintair@nd.edu

    Phys. Rev. B 113, 235303 – Published 3 June, 2026

    DOI: https://doi.org/10.1103/l3rg-fzc8

    Abstract

    The existence of an elementary magnetic pole (charge) was predicted by Dirac in 1931 and here we propose and implement semiconductor nanostructures supporting such poles, which are InN/GaN heterostructure nanowires (NWs) with a few monolayer thick InN inclusions, grown using plasma-assisted molecular beam epitaxy. The formation of magnetic pole/charge occurs in this NWs due to piezoelectric effect leading to formation of Wigner quantum dots (WQDs) having magnetoelectron states—Dirac anyons (DAs), created by magnetic flux quanta self-generated in single-particle states, previously observed in self-assembled InP/GaInP2 WQDs [Mintairov et al., Phys. Rev. B 111, 045410 (2025)]. The formation of WQDs and DAs/magnetic poles having intrinsic magnetic field of several tens of Tesla is evident from the multipeak structure and up to 100% of circular polarization degree of the photoluminescence spectra measured for single NWs. This is supported by the calculations of single-particle states using k¯·p¯ model and electron density distributions using the configurational interaction approach. The presented results demonstrate the scaling of magnetic pole/Dirac anyon properties with material parameters, which allows the realization of high-temperature magnetic pole structures that can be used in nanophotonics and topological quantum computing applications.

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