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    Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system

    M. Yu. Melnikov, D. G. Smirnov, and A. A. Shashkin

    S.-H. Huang and C. W. Liu

    S. V. Kravchenko

    • Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan

    Phys. Rev. B 112, 165309 – Published 21 October, 2025

    DOI: https://doi.org/10.1103/l3jk-t6hn

    Abstract

    We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultraclean two-dimensional electron system in SiGe/Si/SiGe quantum wells are qualitatively different. The double-threshold voltage-current curves, representative of the electron solid formation at low densities, are not observed in the quantum Hall regime, which does not confirm the existence of a quasiparticle quantum Hall Wigner solid and indicates that quasiparticles near integer filling do not form an independent subsystem.

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