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    Mixed-valence Mott insulator and composite excitation in twisted bilayer graphene

    Jing-Yu Zhao, Boran Zhou, and Ya-Hui Zhang

    Phys. Rev. B 112, 235144 – Published 15 December, 2025

    DOI: https://doi.org/10.1103/kts3-81nk

    Abstract

    The interplay of strong correlation and flat topological bands is a central problem in moiré systems such as magic-angle twisted bilayer graphene (TBG). In this work, we construct the ground state wave function and exotic excitations for correlated phases in TBG at even integer fillings. At a filling of ν=−2, our findings challenge the conventional picture of a simple Mott insulator with local moments on AA sites. We instead identify a mixed-valence Mott insulating phase, where a fraction of AA sites are self-doped, placing them in a quantum superposition of two- and three-electron occupancies. This state exhibits a momentum-space-differentiated electronic structure: a large Mott gap, on the order of the Hubbard U, is present throughout most of the Brillouin zone, while a much smaller charge-transfer gap emerges at the Γ point. Notably, the top of the lower band at Γ point is dominated by a composite excitation, an emergent quasiparticle orthogonal to the microscopic electron operator. A similar approach at charge neutrality (ν=0) describes a correlated Mott semimetal. Our work introduces a new framework for understanding Mott physics in topological flat bands, laying a crucial foundation for future investigations of superconductivity upon doping.

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