The layer-polarized anomalous Hall effect (LP-AHE), observed in topological systems and inversion-asymmetric valleytronic systems, has attracted significant interest. However, its practical application is limited by stringent requirements of either a continuously applied external electric field or the spontaneous breaking of space-inversion P symmetry within each sublayer. Here, we demonstrate a sliding-induced mechanism for achieving an intrinsic and switchable LP-AHE in van der Waals systems. We show that interlayer sliding, a natural degree of freedom in van der Waals materials, spontaneously breaks the overall P symmetry and establishes a staggered interlayer coupling based on the $\mathit{k}·\mathit{p}$ model, which directly generates a layer-polarized Berry curvature and the associated LP-AHE without any external fields. Notably, this sliding-induced LP-AHE is inherently linked to sliding ferroelectricity. The resulting internal polarization field couples strongly with both the layer and valley degrees of freedom, enabling a nonvolatile and reversible control of the Hall effect through external field-driven sliding manipulation. Beyond a general $\mathit{k}·\mathit{p}$ model analysis, we quantitatively demonstrate this effect in a realistic material, bilayer ${\mathrm{CoBr}}_2$, via first-principles calculations. Starting from an inversion-symmetric AA stacking, lateral sliding transitions the system into a ferroelectric state with a sizable and layer-polarized anomalous Hall conductivity. Our work establishes interlayer sliding as a powerful control knob for broadening the scope of LP-AHE research and opens new avenues for developing future memory and valleytronic devices.

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• Electronic structure
• Spin-orbit coupling
• Valley degrees of freedom
• Valleytronics
• First-principles calculations