Solid-state spin defects, characterized by their optical addressability and unique coherent properties, are garnering significant attention for their potential applications in quantum technologies, particularly as spin-photonic interfaces and highly sensitive sensors. This study investigates the long-term electron spin Rabi oscillations of nitrogen-vacancy (NV) centers embedded in a $6H$-SiC crystal, stimulated by optical excitation at a wavelength of 980 nm. The experimental findings were acquired through pulsed electron paramagnetic resonance (EPR) conducted at a temperature of 150 K, utilizing two microwave (MW) frequency ranges: the X band (9.6 GHz) and the W band (94 GHz). The Rabi oscillation profiles were effectively modeled using a unified set of simulation parameters across varying MW pulse powers. A comparative analysis of the data from both MW frequency ranges revealed that the primary mechanism responsible for the damping of Rabi oscillations in the NV centers ensemble (with a concentration of $C_N={10}^{17}\mathrm{c}{\mathrm{m}}^{-3}$) is attributed to the nonuniform distribution of the alternating magnetic field $B_1$ within the EPR cavity. An analytical expression that accurately describes the experimentally observed increase in the modulation frequency of Rabi oscillations has been derived. The findings presented in this article are anticipated to contribute to the assessment of fidelity in various quantum algorithms that utilize the investigated spin systems as a foundational platform.

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• NV centers
• Carbides
• Electron paramagnetic resonance
• Electron spin resonance