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Demonstration of electron-mediated voltage-controlled exchange coupling in perpendicular magnetic tunnel junctions

Qi Jia1, Yu-Chia Chen1, Delin Zhang1, Yang Lv1, Shuang Liang2, Onri Jay Benally1, Yifei Yang1, Brahmdutta Dixit1, Deyuan Lyu1 et al.

Brandon Zink1 and Jian-Ping Wang1,*

  • 1Department of Electrical and Computer Engineering, University of Minnesota, 200 Union St. SE, Minneapolis, Minnesota 55455, USA
  • 2Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis, Minnesota 55455, USA

  • *Contact author: jpwang@umn.edu

Phys. Rev. B 113, L020402 – Published 7 January, 2026

DOI: https://doi.org/10.1103/k5fp-8c5p

Abstract

Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection. However, its experimental verification has been challenging due to the coexistence of slower, voltage-induced ionic effects. Here, we fabricate magnetic tunnel junction (MTJ) devices that enable nanosecond timescale voltage application. Our results reveal rapid exchange coupling modulation on the nanosecond timescale, consistent with an electronic origin. The observed enhancement and saturation at low temperatures further rule out ionic migration, conclusively confirming the electronic nature of the mechanism. These results establish EM-VCEC as a viable mechanism for fast and energy-efficient voltage-driven magnetic switching.

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