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    Electronic structure complexity and extremely large magnetoresistance in antiferromagnetic semimetal SmAgSb2

    Juntao Yao1,2,*, Sarah Paone1,3,*, Niraj Aryal1, Asish K. Kundu4, Elio Vescovo4, Weiguo Yin1, and Qiang Li1,3,†

    • *These authors contributed equally to this work.
    • †Contact author: qiangli@bnl.gov

    Phys. Rev. B 112, 195105 – Published 7 November, 2025

    DOI: https://doi.org/10.1103/k2cc-blqv

    Abstract

    SmAgSb2, a layered magnetic semimetal in the tetragonal RTSb2 family (R=Y, Sc, rare earth; T = transition metal), is known to exhibit extremely large magnetoresistance (XMR) below its antiferromagnetic (AFM) transition temperature. In this work, we present a comprehensive investigation combining magnetotransport measurements, density functional theory calculations accounting for electron correlation, and angle-resolved photoemission spectroscopy. Our results reveal a complex electronic structure characterized by a multiband Fermi surface and intricate magnetic ground states. We demonstrate that simple two-band models, previously employed in the literature, fail to consistently describe the observed transport phenomena. Notably, we report an XMR of approximately 25200% at 2 K under a 14 T magnetic field, significantly exceeding earlier reports for this material family and rivaling the performance of prominent nonmagnetic XMR systems. This pronounced enhancement below TN suggests that the XMR originates from a combination of multiband electron-hole compensation and enhanced magnetic scattering in this correlated AFM semimetal.

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