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    Renormalization of the optical band gap through an effective Thirring interaction for massive Dirac-like electrons

    Nilberto Bezerra1,*, Van Sérgio Alves1,†, Leandro O. Nascimento1,2,‡, and Luis Fernández3,§

    • *Contact author: jose.bezerra@icen.ufpa.br
    • †Contact author: vansergi@ufpa.br
    • ‡Contact author: lon@ufpa.br
    • §Contact author: luis.fernandez@ufrontera.cl

    Phys. Rev. B 111, 235207 – Published 20 June, 2025

    DOI: https://doi.org/10.1103/k12f-6zlc

    Abstract

    We analyze mass renormalization in massive Dirac-like systems in (2+1) dimensions arising from electron-phonon interactions at finite temperatures, employing the large-N expansion. Our model combines the low-energy description of charge carriers in a buckled honeycomb lattice with the low-energy approximation for phonons and electron-phonon interactions in two-dimensional materials. Hence the system is modeled as a massive Dirac-like field coupled to a two-component vector field Ai, representing the phonon modes. This framework allows us to compute the one-loop electron self-energy at finite temperature, from which we derive the renormalized electronic band gap, 2mR. The effective model is subsequently applied to describe the renormalized optical band gap (Eopt) in monolayers of transition metal dichalcogenides (TMDs), including MoS2, MoSe2, WS2, and WSe2, using the relation Eopt=2mR−|Eb|, where |Eb| is the exciton binding energy that remains constant at the examined temperature. A good agreement is observed with experimental data for reasonable values of the ultraviolet cutoff, Λ≈1 eV. Our main findings indicate that Eopt remains nearly constant at low temperatures, whereas at higher temperatures it decreases linearly with the temperature T. Specifically, we find that Eopt reduces by approximately ≈[0.1,0.2] eV as the temperature increases from ≈4 K to 500 K, consistent with recent experimental observations. Furthermore, we estimate the temperature range at which the transition to the linear regime occurs, obtaining typical values within ≈[110,150] K for the four materials under consideration.

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