Intrinsic nonlinear valley Hall physics in -symmetric two-dimensional antiferromagnets
Phys. Rev. B 112, 115435 – Published 24 September, 2025
DOI: https://doi.org/10.1103/jy59-jt8s
Abstract
This work investigates the intrinsic second-order nonlinear valley Hall response in -symmetric antiferromagnets, highlighting the pivotal role of the quantum metric in driving this phenomenon. We demonstrate that the valley-dependent nonlinear response can be effectively distinguished through the electric-field-induced orbital magnetization, which exhibits opposite signs across inequivalent valleys, analogous to the behavior of orbital angular momentum in the linear valley Hall response. Employing a minimal two-band model on an antiferromagnetic honeycomb lattice, we systematically examine the influence of intrinsic material parameters on the nonlinear valley Hall response. The analysis is further extended to realistic -symmetric antiferromagnetic systems and anisotropic semiconductors. Our findings advance the fundamental understanding of valley-based transport in centrosymmetric magnetic systems and open new avenues for theoretical and experimental developments in the field of valleytronics.
