Antiferromagnetic spintronics, a promising technology for ultrafast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We design a heterostructure of ${\mathrm{BaMnO}}_3|{\mathrm{KTaO}}_3$ with the idea of proximity-inducing moderate Rashba spin-orbit interaction from the ${\mathrm{KTaO}}_3$ part to the ${\mathrm{BaMnO}}_3$ part, where the latter is already a robust antiferromagnet. Within our DFT calculations, the heterostructure reveals ${\mathrm{BaMnO}}_3$ bands near the Fermi level with a significant magnetic moment per Mn atom and a decent ordering temperature. Further, the ${\mathrm{BaMnO}}_3$ bands in the heterostructure exhibit linear Rashba interaction with a sizable Rashba coefficient, owing to its proximity to ${\mathrm{KTaO}}_3$. Our work can motivate future research by demonstrating the road map to proximity-induced Rashba interaction for antiferromagnetic spintronics.

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• Rashba coupling
• Spintronics
• Complex oxides
• Density functional theory