Effective electrical control and detection of Néel vectors are crucial for antiferromagnetic (AFM) spintronics-based applications. However, the robustness of AFM materials to external magnetic fields and the absence of spin polarization limits their application in magnetic tunnel junctions. Herein, we propose a strategy to achieve both AFM phase transition (Zigzag phase to Néel phase) and electronic phase transition (metal to insulator transition) in $\mathrm{FePS}{\mathrm{e}}_3$ through the electrical control using even weak polarization ferroelectric (FE) materials. FE polarization induces charge accumulation in the $\mathrm{FePS}{\mathrm{e}}_3$ layer, modulating near-neighbor magnetic exchange interactions to trigger the AFM phase transition. Concurrently, this shifts the energy levels of the primarily occupied orbitals away from the Fermi level, consequently opening a band gap. Utilizing this electric field–controllable phase transition, we design three fully electrically controlled $\mathrm{FePS}{\mathrm{e}}_3/\mathrm{I}{\mathrm{n}}_2\mathrm{S}{\mathrm{e}}_3$-based multiferroic tunneling junctions, exhibiting up to ${10}^{15}\%$ in-plane tunneling magnetoresistance (TMR), 319.27% tunneling electroresistance (TER) and 2178.36% out-of-plane TMR. These giant TMRs and large TERs originate from the changes in the tunneling barrier due to this Néel vector flipping and metal to insulator transition, achieving a performance comparable to the ferromagnetism-based multiferroic tunneling junctions. This flipping effect is robust, as even the weak-polarization, sliding ferroelectric $h$-BN-based multiferroic tunneling junctions can achieve similar performance to $\mathrm{I}{\mathrm{n}}_2\mathrm{S}{\mathrm{e}}_3$. These findings are expected to provide theoretical guidance for developing high-performance, easy-to-write, and easy-to-read AFM magnetic tunnel junctions.

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• Ferroelectricity
• Magnetic order
• Magnetic phase transitions
• Spintronics