Export citation

Export citation

Choose format for download:

Download Citation
  • Featured in Physics
  • Editors' Suggestion

Ultrafast charge doping via photothermionic injection in van der Waals devices

Yiliu Li1,*, Esteban Rojas-Gatjens1,*, Yinjie Guo2, Birui Yang2, Dihao Sun2, Luke Holtzman3, Juseung Oh1, Katayun Barmak3, Cory R. Dean2 et al.

James C. Hone4, Nathaniel Gabor5, Eric A. Arsenault1,†,‡, and Xiaoyang Zhu1,§

  • *These authors contributed equally to this work.
  • †Contact author: eric.arsenault@yale.edu
  • ‡Present address: Department of Chemistry, Yale University, New Haven, CT 06520, USA.
  • §Contact author: xyzhu@columbia.edu

Phys. Rev. B 113, 195135 – Published 19 May, 2026

DOI: https://doi.org/10.1103/jf1h-4qcm

Abstract

van der Waals (vdW) heterostructures of two-dimensional (2D) materials have become a rich playground for the exploration of correlated quantum phases, and recent studies have begun to probe their nonequilibrium dynamics under femtosecond laser excitation. In a time-resolved experiment, optical excitation of the multilayer structure can lead not only to rich dynamic responses from the target layers, such as moiré interfaces, but also to additional device functionality from the layer degree of freedom. Here, we investigate optical excitation in a prototypical moiré device of dual-gated twisted WSe2 bilayers, with few-layer graphite gates and hexagonal boron nitride spacers. We establish an ultrafast photodoping mechanism in the moiré bilayer from photothermionic emission of the graphite gates. Using transient reflectance experiments, we reveal photoinduced hole injection evidenced by: (i) a shift of gate voltages at which optical signatures of correlated insulators are observed, (ii) a persistent optical signature indicative of charge diffusion at microsecond timescales and local charge buildup from pulse-to-pulse accumulation, and (iii) photoinduced absorption due likely to transient formation of correlated insulators. We further demonstrate that the injected holes can be selectively controlled by tuning the excitation energy, fluence, and gate bias.

Physics Subject Headings (PhySH)

synopsis

Light-Induced Tuning of Twisted Quantum Materials

Published 19 May, 2026

A laser-based approach rapidly injects charge into moiré materials and drives metal-to-insulator transitions.

See more in Physics

See Also

Photoinduced Metal-to-Insulator Transitions in 2D Moiré Devices

Yiliu Li, Esteban Rojas-Gatjens, Yinjie Guo, Birui Yang, Dihao Sun, Luke Holtzman, Juseung Oh, Katayun Barmak, Cory R. Dean, James C. Hone, Nathaniel Gabor, Eric A. Arsenault, and Xiaoyang Zhu
Phys. Rev. Lett. 136, 206502 (2026)

Authorization Required

We need you to provide your credentials before accessing this content.

Supplemental Material (Subscription Required)

References (Subscription Required)

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation