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Ultrafast charge doping via photothermionic injection in van der Waals devices
Phys. Rev. B 113, 195135 – Published 19 May, 2026
DOI: https://doi.org/10.1103/jf1h-4qcm
Abstract
van der Waals (vdW) heterostructures of two-dimensional (2D) materials have become a rich playground for the exploration of correlated quantum phases, and recent studies have begun to probe their nonequilibrium dynamics under femtosecond laser excitation. In a time-resolved experiment, optical excitation of the multilayer structure can lead not only to rich dynamic responses from the target layers, such as moiré interfaces, but also to additional device functionality from the layer degree of freedom. Here, we investigate optical excitation in a prototypical moiré device of dual-gated twisted bilayers, with few-layer graphite gates and hexagonal boron nitride spacers. We establish an ultrafast photodoping mechanism in the moiré bilayer from photothermionic emission of the graphite gates. Using transient reflectance experiments, we reveal photoinduced hole injection evidenced by: (i) a shift of gate voltages at which optical signatures of correlated insulators are observed, (ii) a persistent optical signature indicative of charge diffusion at microsecond timescales and local charge buildup from pulse-to-pulse accumulation, and (iii) photoinduced absorption due likely to transient formation of correlated insulators. We further demonstrate that the injected holes can be selectively controlled by tuning the excitation energy, fluence, and gate bias.
Physics Subject Headings (PhySH)
synopsis
Light-Induced Tuning of Twisted Quantum Materials
A laser-based approach rapidly injects charge into moiré materials and drives metal-to-insulator transitions.
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