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    Giant intrinsic anomalous Hall conductivity in a MoS2/MnSe2 heterostructure

    Xinjuan Cheng and Xuechao Zhai*

    • *Contact author: zhaixuechao@njust.edu.cn

    Phys. Rev. B 112, 165423 – Published 17 October, 2025

    DOI: https://doi.org/10.1103/jdym-32h6

    Abstract

    Using first-principles self-consistent calculations, we show that MnSe2 with room-temperature ferromagnetism serves as a promising magnetic proximity partner for nonmagnetic MoS2 to realize a giant intrinsic anomalous Hall effect. The anomalous Hall conductivity (AHC) reaches up to 103 S/cm, exceeding that of MnSe2 itself by over 30 times, and persists across a wide energy range spanning of 100 meV near the Fermi energy. This large AHC arises from the proximity-induced significant unbalance distribution of Berry curvature near multiple valleys (comprising two traditional valleys from MoS2 and six additional valleys from MnSe2), for which crystalline anisotropy plays a crucial role. We further illustrate that the giant intrinsic AHC remains robust to the changes in stacking configuration and vertical strain despite band modification. In addition, the significant AHC observed near the Fermi energy in MoS2/MnSe2 vanishes when MnSe2 is substituted with alternative magnets. Our results establish a routine for leveraging heterostructure anisotropy to design low-power Hall sensors or circuits based on MoS2.

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