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    Spin-valley splitting in altermagnet/ferromagnet Ca(CoN)2/CoX (X=Cl2,Se) heterostructures

    Zhaofeng Liang1,2,3,*, Jinsen Zhang4,5,*, Yao Wang4, Chenqiang Hua6,†, and Fei Song1,2,3,‡

    • *These authors contributed equally to this work.
    • †Contact author: huachenqiang@buaa.edu.cn
    • ‡Contact author: songfei@sinap.ac.cn

    Phys. Rev. B 113, 184434 – Published 11 May, 2026

    DOI: https://doi.org/10.1103/j9z1-43gc

    Abstract

    Altermagnets with spin-layer coupling (SLC) enable symmetry-protected spin splitting without net magnetization. In the SLC altermagnet Ca(CoN)2 monolayer, which exhibits distinct sublayer-dependent spin and valley characteristics, we demonstrate that breaking the sublayer-exchange symmetry S via ferromagnetic substrates (CoCl2 and CoSe) induces robust, magnetization-tunable spin-valley splitting, with the magnitude mainly depending on the strength of interfacial interactions. First-principles calculations reveal that strong interfacial charge redistribution and exchange coupling generate spin-valley splitting for both the valence band maximum (VBM) and conduction band minimum (CBM) of Ca(CoN)2. In Ca(CoN)2/CoCl2, antiferromagnetic interfacial exchange produces large spin-valley splitting for CBM but only minor splitting for VBM, with ΔEV= −0.016 and 0.019 eV corresponding to upward and downward magnetic orientations of CoCl2, respectively. In contrast, CoSe exhibits ferromagnetic interfacial exchange and pronounced interfacial charge redistribution, forming prominent Co-Se bonding and antibonding states near the Fermi level under opposite substrate magnetic orientations, resulting in larger spin-valley splitting (ΔEV=0.075 and −0.604 eV) consistent with sublayer-resolved band shifts. Device-level spin-transport simulations of the van der Waals (vdW) tunneling junctions further confirm a magnetization-controlled, spin-valley-dependent transport, with k-resolved maps revealing anisotropy in transmission coefficients. These results demonstrate that vdW heterostructure engineering provides a promising route for achieving large and magnetization-tunable spin-valley splitting in spintronic and valleytronic devices based on altermagnetic materials.

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