We present the synthesis and characterization of ${\mathrm{GdZn}}_3{\mathrm{As}}_3$, a previously unreported variant of the $R{M}_3{X}_3$ family ($R$ = lanthanides; $M$ = Zn, Cd; $X$ = P, As), prepared in both single-crystal and polycrystalline forms. Unlike other $R{M}_3{X}_3$ compounds that crystallize in undistorted hexagonal structures, ${\mathrm{GdZn}}_3{\mathrm{As}}_3$ adopts a distorted ${\mathrm{ScAl}}_3{\mathrm{C}}_3$-type orthorhombic structure with $Cmcm$ space group. Magnetic measurements demonstrate that ${\mathrm{GdZn}}_3{\mathrm{As}}_3$ undergoes a ferromagnetic transition at the Curie temperature ($T_{\mathrm{C}}$) of 6.3 K, which is unique among known $R{M}_3{X}_3$ materials. This magnetic transition is further confirmed by specific heat and electrical resistivity measurements. Single-crystal ${\mathrm{GdZn}}_3{\mathrm{As}}_3$ displays metallic behavior with a pronounced resistivity peak near $T_{\mathrm{C}}$, which is strongly suppressed by magnetic fields, leading to significant negative magnetoresistance. Hall effect measurements reveal a low carrier density and a clear nonlinear anomalous Hall effect in ${\mathrm{GdZn}}_3{\mathrm{As}}_3$. Furthermore, both specific heat and resistivity data suggest the presence of additional magnetic transition(s) below $T_{\mathrm{C}}$, requiring further investigation. These results demonstrate that ${\mathrm{GdZn}}_3{\mathrm{As}}_3$ possesses distinct structural, magnetic, and electronic transport properties within the $R{M}_3{X}_3$ family, establishing it as an exceptional platform for investigating competing magnetic interactions in low-carrier-density rare-earth triangular-lattice systems.

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• Ferromagnetism
• Magnetic anisotropy
• Magnetoresistance
• Ferromagnets
• Triangular lattice
• Crystal growth
• Magnetization measurements
• X-ray diffraction