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    Crucial role of electron-phonon scattering in the spin-splitter effect

    Ran He1,*, Zhifu Duan1,2,*, Binghua Lei2,†, Nannan Luo1, Jiang Zeng1, Ke-Qiu Chen1,‡, and Li-Ming Tang1,§

    • 1Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
    • 2National Key Laboratory of Power Semiconductor and Integration Technology, Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China

    • *These authors contributed equally to this work.
    • †Contact author: bhlei@hnu.edu.cn
    • ‡Contact author: keqiuchen@hnu.edu.cn
    • §Contact author: lmtang@semi.ac.cn

    Phys. Rev. B 112, 064423 – Published 13 August, 2025

    DOI: https://doi.org/10.1103/j8bg-xbtp

    Abstract

    The emergent magnetic phase of altermagnetism supports nonrelativistic spin currents under an external electric field, even in the absence of net magnetization—a phenomenon known as the spin-splitter effect. Traditionally, this effect has been attributed to spin-dependent anisotropies in the electronic band structure or electron group velocities. However, the role of spin-dependent anisotropies in scattering processes, particularly electron-phonon interactions, has been largely overlooked. In this study, we highlight the crucial influence of electron-phonon scattering on both the efficiency and direction of charge-to-spin conversion in altermagnetic materials. When the anisotropy of electron-phonon scattering aligns with that of the electron group velocities, the charge-spin conversion is significantly enhanced. Conversely, a mismatch in their anisotropies can suppress the conversion efficiency—or even reverse the direction of the generated spin current. Our first-principles calculations demonstrate that phonons in real materials can either enhance, suppress, or reverse the spin-splitter effect depending on their interaction anisotropies. These findings underscore the importance of understanding and engineering scattering mechanisms to optimize the performance of altermagnet-based spintronic devices.

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