Valley polarization and altermagnetism are two emerging fundamental phenomena in condensed matter physics, offering unique opportunities for information encoding in novel energy-efficient devices. However, achieving electrical control over these properties in a single material remains a significant challenge. Here, we propose a general strategy to realize ferroelectric-valley (FE-valley) and FE-altermagnetic coupling in bilayer antiferromagnetic (AFM) honeycomb lattices based on an effective four-band spin-full $k·p$ model. Our proposal is validated in bilayer ${\mathrm{MnPTe}}_3$ through first-principles calculations. A spontaneous out-of-plane electric polarization occurs in AB- and BA-stacked configurations, reversibly switchable via interlayer sliding. Remarkably, polarization reversal simultaneously inverts both layer-resolved valley polarization and altermagnetic spin splitting. This dual control enables tunable layer-spin-locked anomalous valley Hall effects and an unprecedented magnetoelectric response in two-dimensional (2D) antiferromagnets. Our work provides a design principle for electrically programmable valleytronic and spintronic functionalities of 2D AFM materials, bridging fundamental symmetry-breaking mechanisms and practical device applications.

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• Electronic structure
• Ferroelectricity
• Spintronics
• Valleytronics