Optospintronic effects in an A-type antiferromagnetic MXene spin valve
Phys. Rev. B 112, 125430 – Published 30 September, 2025
DOI: https://doi.org/10.1103/gw8k-trxk
Abstract
The self-spin valve, an important giant-magnetoresistance effect observed down to a monolayer thickness, is highly desirable because of the ease of experimental sample preparation. Here, we target the A-type antiferromagnetic monolayer MXene. Our first-principles calculations based on the density functional theory demonstrate that biaxial strain in the plane is an effective approach to achieve the transition from an antiferromagnetic semiconductor to a room-temperature ferromagnetic metal in the A-type antiferromagnetic monolayer MXene. The out-of-plane easy magnetization axis is robust under the strain. Interestingly, a nonzero magneto-optical Kerr effect signal emerges with a peak Kerr angle of 0.06 rad under a 7% tensile strain. Our results indicate that strain can effectively modulate the optospintronic valve.