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    Ultrafast nonthermal suppression of ferroelectricity by carrier screening in LiNbO3

    Man Tou Wong*, Zhuquan Zhang*, Zi-Jie Liu, and Keith A. Nelson†

    • *These authors contributed equally to this work.
    • †Contact author: kanelson@mit.edu

    Phys. Rev. B 114, 034309 – Published 14 July, 2026

    DOI: https://doi.org/10.1103/gr6p-f58f

    Abstract

    Ferroelectric materials are key to energy-efficient electronics, memory, and optical applications. While charge carriers typically screen and suppress ferroelectricity, their role under nonequilibrium conditions remains elusive. Here, we use femtosecond laser pulses to liberate trapped carriers in LiNbO3 and track the response using time-resolved second-harmonic generation and stimulated Raman scattering. Even dilute photoexcited carriers induce a rapid yet enduring suppression of polarization and Raman susceptibility. Fluence- and temperature-dependent analyses confirm the suppression is nonthermal and arises from transient carrier screening. These findings reveal an efficient, reversible, and symmetry-preserving mechanism to modulate ferroelectricity on ultrafast timescales, offering an alternative route to control ferroic and competing quantum phases.

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