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    Designing flat bands and pseudo-Landau levels in GaAs with patterned gates

    Pierre A. Pantaleón1,2,*, Zhen Zhan1, Siddhartha E. Morales3, and Gerardo G. Naumis3,†

    • *Contact author: pierre.pantaleon@imdea.org
    • †Contact author: naumis@fisica.unam.mx

    Phys. Rev. B 111, 245303 – Published 18 June, 2025

    DOI: https://doi.org/10.1103/ghyq-sz16

    Abstract

    We investigate the electronic properties of two-dimensional electron gases (2DEGs) subjected to a periodic patterned gate. By incorporating the superlattice (SL) potential induced by patterning into the Schrödinger equation, we develop a methodology for obtaining exact analytical solutions. These solutions enable us to construct a comprehensive phase diagram illustrating the emergence of narrow bands and pseudo-Landau levels driven by the SL potential. To complement the analytical approach, we employ a standard plane-wave formalism to track the evolution of the band structure as the SL strength increases. By breaking the inversion symmetry of the SL potential, we find a nontrivial Berry curvature. Furthermore, we introduce a self-consistent Hartree screening to account for the interplay between the SL potential and electronic interactions. Our findings not only reveal the emergence of a nontrivial quantum geometry and a competition between SL strength and electron-electron interactions but also highlight the value of exact analytical solutions for understanding and engineering electronic phases in patterned 2DEG systems.

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