Origin of flat-band and heavy-fermion behavior in (, La, Lu; , Si)
Phys. Rev. B 112, 085119 – Published 12 August, 2025
DOI: https://doi.org/10.1103/gbw9-yzwl
Abstract
We present a comprehensive investigation of the electronic structures of the family ( = Y, La, Lu; = Ge, Si) using density functional theory (DFT) combined with dynamical mean-field theory (DMFT), with a particular focus on the origin of the flat band observed in . Our calculations reveal that besides , only exhibit a nearly flat band around the M point. We demonstrate that, in addition to kinetic frustration and strong electronic correlation effects, hybridization between the and Fe -orbitals plays a crucial role in the formation of flat bands. By manipulating the crystal structure and doping of to tune the hybridization between Lu and Fe, we successfully reproduce a flat band similar to that in . The high sensitivity of the flatness of the heavy band in to structural modifications and doping provide us a new strategy for manipulating -electron heavy fermion states. Our findings not only clarify how kinetic frustration, hybridization, and strong electronic correlation effects synergistically drive the emergence of flat bands in but also pave the way for exploring new -electron heavy fermion systems.