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    Origin of flat-band and heavy-fermion behavior in RFe2X2 (R=Y, La, Lu; X=Ge, Si)

    Rui Liu1, Pengyu Zheng1, Yiran Peng1, Ying Yang1, Weian Guo1, and Zhiping Yin1,2,*

    • *Contact author: yinzhiping@bnu.edu.cn

    Phys. Rev. B 112, 085119 – Published 12 August, 2025

    DOI: https://doi.org/10.1103/gbw9-yzwl

    Abstract

    We present a comprehensive investigation of the electronic structures of the RFe2X2 family (R = Y, La, Lu; X = Ge, Si) using density functional theory (DFT) combined with dynamical mean-field theory (DMFT), with a particular focus on the origin of the flat band observed in YFe2Ge2. Our calculations reveal that besides YFe2Ge2, only LuFe2Ge2 exhibit a nearly flat band around the M point. We demonstrate that, in addition to kinetic frustration and strong electronic correlation effects, hybridization between the R and Fe d-orbitals plays a crucial role in the formation of flat bands. By manipulating the crystal structure and doping of LuFe2Ge2 to tune the hybridization between Lu and Fe, we successfully reproduce a flat band similar to that in YFe2Ge2. The high sensitivity of the flatness of the heavy band in LuFe2Ge2 to structural modifications and doping provide us a new strategy for manipulating d-electron heavy fermion states. Our findings not only clarify how kinetic frustration, hybridization, and strong electronic correlation effects synergistically drive the emergence of flat bands in RFe2X2 but also pave the way for exploring new d-electron heavy fermion systems.

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