In pursuing room-temperature quantum hardware, our study introduces the effect of tunable photodoping in gate-bias assisted quantum wire within a trigated architecture of an $n$-type junctionless metal-oxide-semiconductor field-effect transistor. To comprehend this behavior, we developed a theoretical model based on a nonequilibrium Green's function formalism. Our findings demonstrate the transition of the device from a semiclassical to a quantum domain under gate influence, with optical occupancy of electronic subbands at room temperature. Tunable photodoping originates from varying resonant excitations due to reallocation of interacting states between valence and conduction bands. Gate bias causes centralization of electrons, which experience reduced interfacial trouble, resulting in distinct current peaks for specific gate biases compared to dark conditions at various drain voltages. This study underscores the persistence of quantum confinement effects via semiclassical transport, even at room temperature.

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• Mesoscopics
• Optoelectronics
• Photoinduced effect