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Strained donor-bound excitons in Si28

David A. Vogl1,2,*, Noah L. Braitsch1,2, Başak Ç. Özcan1,2, Niklas S. Vart1,2, M. L. W. Thewalt3, and Martin S. Brandt1,2

  • *Contact author: david.vogl@wsi.tum.de
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Phys. Rev. B 113, 075203 – Published 17 February, 2026

DOI: https://doi.org/10.1103/g6yl-q9bl

Abstract

We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition (D0→D0X) in isotopically enriched Si28, focusing on the group V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential Ξu is found to be significantly larger than values reported for other states or transitions in silicon and shows clear dependence on the donor species, indicating an increased sensitivity of the D0X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential d, suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D0X transitions.

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Phys. Rev. B 113, 075203– Published 17 February, 2026
  • Received 10 October 2025
  • Revised 19 November 2025
  • Accepted 9 December 2025
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