Modification of Hanle and polarization recovery curves under interplay of hopping and quantum measurement back action
Phys. Rev. B 113, 125425 – Published 18 March, 2026
DOI: https://doi.org/10.1103/g6jj-1733
Abstract
The optical measurements of Hanle and polarization recovery effects for localized charge carriers are the basic tools for determining parameters of the spin dynamics, such as, for example, the strength of the hyperfine interaction in quantum dots. We describe the dependence of the spin polarization of localized electrons on transverse and longitudinal magnetic fields taking into account the interplay between electron hopping and measurement back action. We show that these two have a qualitatively similar effect in the Faraday geometry, but compete in the Voigt geometry. This allows one to describe a broad range of the experimental results and study the fundamental effects of quantum measurements.