Strongly correlated transport in topological Y-junction devices
Phys. Rev. B 112, 115402 – Published 2 September, 2025
DOI: https://doi.org/10.1103/g4c1-qk8t
Abstract
I analyze electron transport through a Y junction formed by helical edge states of a two-dimensional topological insulator (2DTI), focusing on the strongly interacting regime. An experimentally motivated device geometry and a spin-conserving tunneling Hamiltonian are proposed. I compute the conductance tensor and show that, for specific tunneling phases and strong repulsive interactions (), transport is governed by an intermediate renormalization group fixed point that interpolates between the weak- and strong-tunneling limits. These results extend previous studies of point-contact tunneling and demonstrate how interactions qualitatively modify the transport properties of multiterminal topological devices.