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    Strongly correlated transport in topological Y-junction devices

    E. Novais

    Phys. Rev. B 112, 115402 – Published 2 September, 2025

    DOI: https://doi.org/10.1103/g4c1-qk8t

    Abstract

    I analyze electron transport through a Y junction formed by helical edge states of a two-dimensional topological insulator (2DTI), focusing on the strongly interacting regime. An experimentally motivated device geometry and a spin-conserving tunneling Hamiltonian are proposed. I compute the conductance tensor and show that, for specific tunneling phases and strong repulsive interactions (g<1/2), transport is governed by an intermediate renormalization group fixed point that interpolates between the weak- and strong-tunneling limits. These results extend previous studies of point-contact tunneling and demonstrate how interactions qualitatively modify the transport properties of multiterminal topological devices.

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