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    Origin of Janus-induced polarization enhancement in sliding ferroelectrics

    Diyu Dong1, Yupan Peng1, Chengshun Liu1, Yuqi Xia1, Sicheng Liu1,2, Peng Zhang2, and Zhe Wang1,2,*

    • 1Shandong Key Laboratory of Space Environment and Exploration Technology, School of Space Science and Technology, Shandong University, Weihai 264209, China
    • 2Shandong Provincial Key Laboratory of Nuclear Science, Nuclear Energy Technology and Comprehensive Utilization, Weihai Frontier Innovation Institute of Nuclear Technology, Shandong University, Weihai 264209, China

    • *Contact author: wangzhe2024@sdu.edu.cn

    Phys. Rev. B 112, 205403 – Published 5 November, 2025

    DOI: https://doi.org/10.1103/fw58-6gvg

    Abstract

    Sliding ferroelectricity, characterized by an out-of-plane electric polarization originating from asymmetric interlayer charge distribution in noncentrosymmetric van der Waals bilayers or multilayers, suffers from generally low polarization. Here, we propose that interface charge density enhancement is a key mechanism for increasing out-of-plane polarization in sliding ferroelectrics, which is demonstrated through first-principles calculations on two-dimensional Janus material MoSeS. The tail-to-tail stacked MoSeS bilayer (t-MoSeS) exhibits significantly larger polarization than other bilayers, which mainly origins from reduced interlayer distances and enhanced interlayer charge accumulation due to Janus structures. A systematic analysis reveals that the polarization of t-MoSeS displays heightened (reduced) sensitivity to interlayer distance (lattice constant), resulting in the Janus-induced polarization enhancement (ΔP) amplified at smaller interlayer distances and lattice constants. Furthermore, we theoretically verify the scaling law ΔP∝P02, directly linking the polarization enhancement to the Janus monolayer polarity (P0). Our work establishes interface charge engineering as a fundamental design principle for high-polarization sliding ferroelectrics, with Janus materials providing a promising implementation pathway, resolving the structure-charge-polarization interplay and advancing the frontier of two-dimensional ferroelectric materials.

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