Generating and characterizing uniform and staggered spin polarization in antiferromagnets is one of the key challenges for antiferromagnetic (AFM) spintronic technology. Here, we perform perturbative theory, group-theoretical symmetry analysis, and low-energy and ab initio simulations to propose that the magnetic precession near the equilibrium magnetic axis could generate finite uniform and staggered spin polarizations at the opposite magnetic sublattices (referring to total magnetic and Néel vector generation) in a single AFM semiconductor. This response does not require the heterojunction setup and could eliminate the lattice mismatch issues at the junction. Through scrutinizing all magnetic groups with symmetrically protected vanishing magnetic moments, and especially focusing on parity-time $\left(\mathcal{PT}\right)$ invariant groups, we identify the symmetry constraints that describe the staggered spin accumulation responses, and disclose their fieldlike and dampinglike characters. This unravels a hidden spin accumulation mode in AFM semiconductors. Furthermore, we simulate such an effect using a perturbative approach and suggest that an electric gate field and Floquet light dressing can effectively manipulate these responses.

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• Magnetic order
• Spin generation
• Antiferromagnets
• Symmetries
• Density functional calculations
• k dot p method