The Dzyaloshinskii-Moriya interaction (DMI) plays an important role in the spin-orbit torque (SOT)-driven magnetization switching and the chiral domain wall motion for energy-efficient spintronics. Topological insulators (TIs), a new class of quantum materials, can provide an enhanced SOT strength, resulting in a lower power consumption. However, DMI in the TI/ferromagnet heterostructures remains largely unexplored. Moreover, the synthesis of TI films using molecular beam epitaxy hinders their practical applications. Here, continuous ${\left(\mathrm{BiSb}\right)}_2{\mathrm{Te}}_3$ films are prepared using the industry-compatible magnetron sputtering technique. We observe a distinct DMI and left-handed Néel-type chiral domain walls in our sputtered ${\left(\mathrm{BiSb}\right)}_2{\mathrm{Te}}_3$-based devices. The DMI coefficient D is evaluated to be $\sim 97\mu \mathrm{J}/{\mathrm{m}}^2$, and the DMI significantly influences the behavior of chiral domain wall motion. We demonstrate efficient perpendicular magnetization switching of 3d ferromagnetic CoFeB through the giant SOT in ${\left(\mathrm{BiSb}\right)}_2{\mathrm{Te}}_3$; the current density is $1.36\times {10}^5\mathrm{A}/{\mathrm{cm}}^2$. Our work will advance the research on topological material-based DMI and domain wall dynamics.

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• Magnetic texture
• Magnetism
• Spintronics
• Topological materials