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7/3 fractional quantum Hall state in GaAs double quantum wells

Mandun Fu1, Ian Farrer2, David A. Ritchie3, and Sanjeev Kumar1,*

  • *Contact author: sanjeev.kumar@ucl.ac.uk
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Phys. Rev. B 113, 205433 – Published 28 May, 2026

DOI: https://doi.org/10.1103/f33x-cqrr

Abstract

We observed the fractional quantum Hall effect at a total filling factor of 7/3 in the Hall resistance, accompanied by a single minimum in longitudinal magnetoresistance in uncoupled, bilayer electron gases formed in GaAs double quantum well systems. When the density of the top electron gas is varied, the total 7/3 (1+4/3) state can be tuned such that while the Hall plateau value essentially remains unchanged, the associated longitudinal magnetoresistance develops into a double minimum. When Zeeman energy is introduced by tilting the applied magnetic field, the two minima respond differently; one remains essentially unchanged, while the other deepens, consistent with the differing spin dependences of the integer and fractional gaps. Our results demonstrate that the detailed evolution of the 7/3 plateau probes layer-resolved incompressibility, interlayer charge redistribution, and spin-dependent gap behavior in a nontunneling bilayer system.

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Phys. Rev. B 113, 205433– Published 28 May, 2026
  • Received 16 February 2026
  • Revised 3 April 2026
  • Accepted 11 May 2026
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