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    Strong coupling of polaritons at room temperature in a GaAs/AlGaAs structure

    Hassan Alnatah1,*,†, Shuang Liang1,*, Qiaochu Wan1, Jonathan Beaumariage1, Ken West2, Kirk Baldwin2, Loren N. Pfeiffer2, Man Chun Alan Tam3,4, Zbigniew R. Wasilewski3,4,5 et al.

    David W. Snoke1

    • *These authors contributed equally to this work.
    • †Contact author: haa108@pitt.edu

    Phys. Rev. B 112, 045307 – Published 7 July, 2025

    DOI: https://doi.org/10.1103/dstp-cbcf

    Abstract

    We report direct measurement of the dispersion relation of polaritons in GaAs/AlGaAs microcavity structures at room temperature, which clearly shows that the polaritons are in the strong-coupling limit. The Rabi splitting ranges from 12.3 to 15.2 meV depending on the detuning, significantly exceeding the heavy-hole exciton half width of 5.2 meV. As the polariton density increases, the Rabi splitting decreases; but even when the polariton gas becomes a coherent, Bose-condensate-like state, the polaritons retain a strong exciton component, as seen in the nonlinear energy shift of the light emission. This opens up the possibility of polaritonic devices at room temperature in a material system which can be grown with very high quality and uniformity.

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