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    Electrostatic gate-controlled quantum interference in a high-mobility two-dimensional electron gas at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 interface

    Km Rubi1,*, Kun Han2, Huang Zhen2, Michel Goiran3, Duncan K. Maude3, Walter Escoffier3, and A. Ariando2

    • 1National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
    • 2Department of Physics, National University of Singapore, 117551 Singapore
    • 3Laboratoire National des Champs Magnétiques Intenses (LNCMI-EMFL), Université de Toulouse, CNRS, INSA, UPS, 143 Avenue de Rangueil, 31400 Toulouse, France

    • *Contact author: rubi@lanl.gov

    Phys. Rev. B 113, 125303 – Published 5 March, 2026

    DOI: https://doi.org/10.1103/dk6m-9vpr

    Abstract

    We report quantum oscillations in magnetoresistance that are periodic in magnetic field (B), observed at the interface between (La0.3Sr0.7)(Al0.65Ta0.35)O3 and SrTiO3. Unlike Shubnikov–de Haas oscillations, which appear at magnetic fields >7T and diminish quickly as the temperature rises, these B-periodic oscillations emerge at low fields and persist up to 10 K. Their amplitude decays exponentially with both temperature and field, specifying dephasing of quantum interference. Increasing the carrier density through electrostatic gating results in a systematic reduction in both the amplitude and frequency of the oscillations, with complete suppression beyond a certain gate voltage. We attribute these oscillations to the Altshuler-Aronov-Spivak effect, likely arising from naturally formed closed-loop paths due to the interconnected quasi-one-dimensional conduction channels along SrTiO3 domain walls. The relatively long phase coherence length (≃1.8µm at 0.1 K), estimated from the oscillation amplitude, highlights the potential of complex oxide interfaces as a promising platform for exploring quantum interference effects and advancing device concepts in quantum technologies, such as mesoscopic interferometers and quantum sensors.

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