We show that interlayer excitons in double-layer semiconductor heterostructures can form a Bose solid which is a Bose supersolid characterized by exactly one exciton per lattice site. This would be the first realization of an supersolid in an electronic device. Capturing the characteristics and associated emergent phenomena of the exciton supersolid requires extending the Gross-Pitaevskii formalism to include strong two-particle correlations and exclude exciton self-interactions. We develop such a formalism. We apply it across experimentally accessible exciton densities and interlayer separations, and we show that its solutions incorporate both superfluid and supersolid ground states. This extended framework allows us to determine the superfluid-supersolid transition and explore the low-temperature properties of the exciton supersolid across its complete parameter space.

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• Excitons
• Layered semiconductors
• Superfluids
• Supersolids