Export citation

Export citation

Choose format for download:

Download Citation

    Carrier mobility trends in nitride perovskites: First-principles insights and phenomenological models

    Yutong Li1, Dong An2, Bonan Zhu2,3,*, Yuan Huang1,†, and Gang Tang1,‡

    • *Contact author: bzhu@bit.edu.cn
    • †Contact author: yhuang@bit.edu.cn
    • ‡Contact author: gtang@bit.edu.cn

    Phys. Rev. B 114, 045206 – Published 27 July, 2026

    DOI: https://doi.org/10.1103/cz5p-mh12

    Abstract

    Emerging polar nitride perovskites have recently attracted considerable attention for ferroelectric photovoltaic applications owing to their smaller band gaps compared with conventional oxide perovskites. Carrier mobility is a key performance parameter governing charge transport and device efficiency; however, quantitative understanding of carrier mobility in nitride perovskites remains limited. Here, we systematically investigate the charge-carrier transport properties of eight nitride perovskites using first-principles density-functional theory combined with Boltzmann transport calculations. The results reveal that these materials exhibit bandlike transport behavior, with room-temperature carrier mobilities ranging from 2 to 23cm2V−1s−1. These values are comparable to those of doped SrTiO3, but somewhat lower than those of typical halide perovskites. Among the investigated compounds, YWN3 exhibits the highest electron mobility (22.19cm2V−1s−1), whereas CeTaN3 shows the highest hole mobility (22.16cm2V−1s−1). We identify piezoelectric scattering as the dominant mechanism limiting carrier mobility in most of the investigated nitride perovskites, while polar optical phonon scattering plays a comparable role. In contrast, polar optical phonon scattering becomes the primary mobility-limiting mechanism in CeNbN3 and YMoN3, reflecting stronger electron-phonon coupling in these compounds. Furthermore, we develop two simplified conceptual models to explain the observed mobility trends across the material series. Based on these models, Young's modulus and carrier effective mass are identified as the key physical descriptors governing carrier mobility in nitride perovskites. Our results establish the intrinsic mobility limits and provide fundamental insights into carrier transport in nitride perovskites, offering important guidance for the design and optimization of nitride-perovskite-based ferroelectric photovoltaic devices.

    Physics Subject Headings (PhySH)

    Authorization Required

    We need you to provide your credentials before accessing this content.

    Supplemental Material (Subscription Required)

    References (Subscription Required)

    Outline

    Information

    Sign In to Your Journals Account

    Filter

    Filter

    Article Lookup

    Enter a citation