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    Low lattice thermal conductivity driven by lone-pair electron and rattling dissipation in the Zintl-phase BaCaSn thermoelectric material

    Pengfei Zhang1, Shuwei Tang1,2,*, Shulin Bai1, Yufei Meng1, Peng Ai1, Zhiwei Zhang1, Yunzhuo Zhang1, Yujie Bao1, and Da Wan1,†

    • *Contact author: tangsw911@nenu.edu.cn
    • †Contact author: wanda9727@163.com

    Phys. Rev. B 112, 024313 – Published 21 July, 2025

    DOI: https://doi.org/10.1103/cqch-96kd

    Abstract

    The thermoelectric performance of the BaCaSn compound is systematically investigated through first-principles calculations and Boltzmann transport theory in the current work. The BaCaSn compound features a [Ca−Sn]2− anionic framework interlaced with Ba2+ cation. The intricate bond lengths and distorted bond angles within the anionic framework facilitate efficient carrier transport while simultaneously enhancing the anharmonic lattice dynamics. Electronic structure analysis reveals that the BaCaSn compound is an indirect semiconductor with a bandgap of 0.71 eV. The sharp conduction band distribution improves electron mobility, while the multivalley nature of the valence band increases the hole effective mass, significantly enhancing the Seebeck coefficient. In terms of thermal transport, the weak interaction between Ba2+ cation and the [Ca−Sn]2− anionic framework leads to pronounced rattling dissipation behavior, which significantly enhances phonon scattering and reduces phonon group velocity, thus exhibiting typical phonon glass behavior. Notably, the p-type doping strategy significantly increases the power factor due to the multivalley effect, thereby resulting in an excellent thermoelectric performance. The BaCaSn compound demonstrated figure of merit values of 1.1 and 0.8 under p-type and n-type doping conditions at 700 K, respectively. This work not only elucidates the fundamental physicochemical mechanisms governing the coupled electron-phonon transport in the BaCaSn compound, but also provides critical theoretical insights for the rational design of advanced thermoelectric materials.

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