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    Native defects and erbium impurities in CaWO4

    Minseok Choi1,2,3,*, Mark E. Turiansky3,4, BaiQing Zhao3, Jeff D. Thompson5, and Chris G. Van de Walle3,†

    • *Contact author: minseok.choi@inha.ac.kr
    • †Contact author: vandewalle@mrl.ucsb.edu

    Phys. Rev. B 114, 254101 – Published 3 November, 2026

    DOI: https://doi.org/10.1103/cnq8-782l

    Abstract

    We perform hybrid density functional calculation to study the energetics, electronic properties, optical transitions, and migration barriers of native defects in CaWO4. Oxygen and calcium vacancies are most likely to form in the absence of doping, but interstitials could also incorporate. Tungsten-related defects are unlikely to be present. The positively charged VO and the negatively charged VCa are likely to form complexes. Calculated optical transition levels indicate that experimentally observed absorption and emission peaks can be attributed mainly to oxygen-related defects. Calculations of migration barriers allow us to conclude that Cai2+, VO2+, and Oi2− are highly mobile, even below room temperature. We have also examined Er dopants, finding that erbium easily substitutes on the Ca site in a positive charge state. Erbium can form complexes with VCa and Oi, which would deactivate the Er. If Er is introduced by implantation, Er interstitials are likely present, which will produce emission that is prone to spectral diffusion and blinking. Our calculated properties of Eri explain why annealing at modest temperatures allows the interstitials to move into substitutional sites and point defects to move away, resulting in stable emission.

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