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Nonequilibrium quantum transport framework for spintronic devices with dynamical correlations

Declan Nell1, Miloš M. Radonjić2, Ivan Rungger3,4, Liviu Chioncel5, Stefano Sanvito1, and Andrea Droghetti1,6,*

  • *Contact author: andrea.droghetti@unive.it
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Phys. Rev. B 113, 155132 – Published 15 April, 2026

DOI: https://doi.org/10.1103/c8zs-8797

Abstract

Two-terminal spintronic devices remain challenging to model under realistic operating conditions, where the interplay of complex electronic structures, correlation effects, and bias-driven nonequilibrium dynamics may significantly impact charge and spin transport. Existing ab initio methods either capture bias-dependent transport but neglect dynamical correlations or include correlations but are restricted to equilibrium or linear-response regimes. To overcome these limitations, we present a framework for steady-state quantum transport, combining density functional theory (DFT), the nonequilibrium Greens' function (NEGF) method, and dynamical mean-field theory (DMFT). The framework is then applied to Cu/Co/vacuum/Cu and an Fe/MgO/Fe tunnel junction. In Co, correlations drive a transition from Fermi-liquid to non-Fermi-liquid behavior under finite bias, due to scattering of electrons with electron-hole pairs. This leads to incoherent contributions to the conductance that are observable in scanning tunneling spectroscopy experiments. In contrast, in the Fe/MgO/Fe junction, correlation effects are weaker: Fe remains close to equilibrium even at large biases. Nevertheless, inelastic scattering can still induce partly incoherent transport that modifies the device's response to the external bias. Overall, our framework provides a route to model spintronic devices beyond single-particle descriptions, while also suggesting new interpretations of experiments.

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Phys. Rev. B 113, 155132– Published 15 April, 2026
  • Received 23 November 2025
  • Revised 11 February 2026
  • Accepted 13 March 2026
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