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Self-induced spin-orbit torque switching in a synthetic antiferromagnetic Co2MnGa/MnGa bilayer

Rongkun Han1,2,*, Haohang Cheng1, Dahai Wei1, Yuan Lu2, and Jianhua Zhao1,3,†

  • *Contact author: rongkun.han@univ-lorraine.fr
  • †Contact author: jianhuazhao@buaa.edu.cn

Phys. Rev. B 114, L140401 – Published 2 September, 2026

DOI: https://doi.org/10.1103/byz8-31yp

Abstract

The large intrinsic spin current in magnetic Weyl semimetals provides a promising platform for spin-orbit torque (SOT) devices. Here, we demonstrate SOT-driven magnetization switching in a synthetic antiferromagnet (SAF) composed of a Co2MnGa (CMG)/MnGa bilayer. In this heavy metal-free structure, CMG film functions simultaneously as a spin current source and as a magnetic layer. Macrospin simulations confirm the self-induced switching mechanism in the bilayer. The SOT generated by CMG switches the MnGa layer, which in turn triggers the reversal of the CMG layer via strong antiferromagnetic exchange coupling. These results elucidate the spin dynamics in SAFs and provide a pathway toward SOT devices with self-induced magnetization switching.

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