- Letter
Self-induced spin-orbit torque switching in a synthetic antiferromagnetic /MnGa bilayer
Phys. Rev. B 114, L140401 – Published 2 September, 2026
DOI: https://doi.org/10.1103/byz8-31yp
Abstract
The large intrinsic spin current in magnetic Weyl semimetals provides a promising platform for spin-orbit torque (SOT) devices. Here, we demonstrate SOT-driven magnetization switching in a synthetic antiferromagnet (SAF) composed of a (CMG)/MnGa bilayer. In this heavy metal-free structure, CMG film functions simultaneously as a spin current source and as a magnetic layer. Macrospin simulations confirm the self-induced switching mechanism in the bilayer. The SOT generated by CMG switches the MnGa layer, which in turn triggers the reversal of the CMG layer via strong antiferromagnetic exchange coupling. These results elucidate the spin dynamics in SAFs and provide a pathway toward SOT devices with self-induced magnetization switching.