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    Tailoring antiferroelectric phase transitions in ultrahigh energy storage ceramics

    Kai Dai (戴凯)1, Feifan Hu (胡斐凡)2, Kai Jiang (姜凯)3,4, Zhen Liu (刘振)5, Genshui Wang (王根水)5, Jun Wang (王军)1, Anyang Cui (崔安阳)2,*, and Zhigao Hu (胡志高)3,†

    • 1College of Science, Shanghai Institute of Technology, Shanghai 201418, China
    • 2Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
    • 3Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
    • 4School of Arts and Sciences, Shanghai Dianji University, Shanghai 200240, China
    • 5Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

    • *Contact author: aycui@shnu.edu.cn
    • †Contact author: zghu@ee.ecnu.edu.cn

    Phys. Rev. B 113, 014104 – Published 7 January, 2026

    DOI: https://doi.org/10.1103/bnmt-h1p3

    Abstract

    Understanding the structure-property relationships and structural evolution under external stimuli is critical for developing high-performance lead-free antiferroelectric energy storage ceramics, while the underlying physics mechanism remains ambiguous. Here, the structural evolution, phonon behavior, structural heterogeneity, and optical transitions in (1−x)(0.7AgNbO3−0.3NaNbO3)−xSr0.7Bi0.2TiO3 (AN-NN-SBT) energy storage ceramics through advanced spectroscopy techniques have been studied. Doping with Sr0.7Bi0.2TiO3 (SBT) induces lattice distortion via ionic radius mismatch, driving a phase transition from antiferroelectric to paraelectric states. The optical band gap (Eg) is broadened and the breakdown strength is enhanced, owing to the concomitant formation of Ti-O bonds, vacancy creation, and orbital hybridization. Furthermore, temperature-dependent Raman analyses reveal reversible phase transitions (M−O−T) governed by phonon merging, abnormal frequency shift, and soft mode suppression. Thermal modulation induces nonlinear Eg narrowing, attributed to synergistic effects of lattice thermal expansion and electron-phonon interactions. Importantly, the phase coexistence and structure evolution process with temperature were discovered by in situ Raman mapping directly. A composition-critical temperature phase diagram was established, demonstrating that SBT doping reduces the structural transition temperatures and enables the M3/O phase boundary at room temperature in the AN-NN-SBT20 system, which in turn yields optimal energy storage performance. These findings elucidate the interplay between lattice symmetry, electronic properties, and energy storage performance, providing a strategic framework for designing high-performance lead-free energy storage ceramics.

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