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    Scaling laws of electron and hole spin relaxation in indirect band gap (In,Al)As/AlAs quantum dots

    T. S. Shamirzaev1, D. R. Yakovlev2,3, D. S. Smirnov3, V. N. Mantsevich4, and M. Bayer2,5

    Phys. Rev. B 114, 115415 – Published 24 August, 2026

    DOI: https://doi.org/10.1103/b358-1776

    Abstract

    We investigate the electron and heavy hole spin dynamics as a function of magnetic field in ensembles of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. Employing a comprehensive model that accounts for both the exciton level quartet and the magnetic-field-driven redistribution of excitons between these states via spin relaxation processes, we extract the electron (τse) and heavy hole (τsh) spin relaxation times as a function of magnetic field for QDs of varying sizes. Our analysis reveals that both τse(B) and τsh(B) exhibit power-law scaling behavior, yet the scaling exponents for electrons and heavy holes show markedly different evolutions with QD size. For QDs with a diameter of about 9 nm, we find τse(B)∝B−5 and τsh(B)∝B−3. Remarkably, increasing the QD diameter to about 16 nm results in a drastic change of the scaling laws, with both τse(B) and τsh(B) following a ∝B−9 dependence. We discuss the underlying mechanisms responsible for this size-dependent transformation of the magnetic field scaling behavior of carrier spin relaxation.

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