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    Carrier compensation and quantum interference effects near room temperature in a Heusler ferromagnet

    Paul M. Shand1, Salimatou Diallo1, Brandon Schmidt1, Caden Sadler1, Stephen McFadden1, Jax Wysong2, Caleb Ogden3, Lin Zhou3, Parashu Kharel2 et al.

    Pavel V. Lukashev1

    Phys. Rev. B 113, 134429 – Published 20 April, 2026

    DOI: https://doi.org/10.1103/b1zh-914c

    Abstract

    We have conducted magnetotransport measurements on samples of NiFeMnAl and NiFe1.25Mn0.75Al, both of which are ferromagnetic. The longitudinal resistivity ρxx of both materials exhibits shallow minima at low temperatures because of enhanced electron–electron interaction quantum-interference correction effects. The variation of ρxx with temperature is very weak, with only a 2.5% increase between 10 K and 310 K, consistent with semimetallic behavior. At 310 K, NiFeMnAl exhibits a sharp increase in ρxx. No such increase is observed in NiFe1.25Mn0.75Al. The resistivity upturn in NiFeMnAl coincides with a similarly pronounced change in the ordinary Hall coefficient, which changes sign, indicating two-carrier transport and a shift in the Fermi level, consistent with a temperature-induced Lifshitz transition. The longitudinal magnetoresistance data exhibit excellent agreement with weak-localization theory up to temperatures near room temperature. The temperature-driven sign change in the Hall coefficient is also coincident with a shift in the magnetoresistance from negative to positive, and then oscillations at higher temperature. These dramatic effects indicate multiband transport, which calculations suggest could be caused by the underlying Weyl semimetallic behavior.

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