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    Theoretical study of thermally activated magnetization switching under microwave assistance: Switching paths and barrier height

    H. Suto1, K. Kudo1, T. Nagasawa1, T. Kanao1, K. Mizushima1, R. Sato1, S. Okamoto2, N. Kikuchi2, and O. Kitakami2

    • 1Corporate Research and Development Center, Toshiba Corporation, Komukai-Toshiba-cho 1, Saiwai-ku, Kawasaki 212-8582, Japan
    • 2Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

    Phys. Rev. B 91, 094401 – Published 2 March, 2015

    DOI: https://doi.org/10.1103/PhysRevB.91.094401

    Abstract

    Energy barrier height for magnetization switching is theoretically studied for a system with uniaxial anisotropy in a circularly polarized microwave magnetic field. A formulation of the Landau-Lifshitz-Gilbert equation in a rotating frame introduces an effective energy that includes the effects of both the microwave field and static field. This allows the effective-energy profiles to rigorously describe the switching paths and corresponding barrier height, which govern thermally activated magnetization switching under microwave assistance. We show that fixed points and limit cycles in the rotating frame lead to various switching paths and that under certain conditions, switching becomes a two-step process with an intermediate state.

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