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  • Rapid Communication

Optical transitions in β-FeSi2 films

Lianwei Wang* and M. Östling

Kai Yang and Linhong Qin

Chenglu Lin, Xiangdong Chen, and Shichang Zou

Yuxiang Zheng and Youhua Qian

  • Royal Institute of Technology, Solid State Electronics, Electrum 229, S-164 40, Kista-Stockholm, Sweden

  • Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China

  • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China

  • Department of Physics, Fudan University, Shanghai 200433, People's Republic of China

  • *Permanent address: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.

Phys. Rev. B 54, R11126(R) – Published 15 October, 1996

DOI: https://doi.org/10.1103/PhysRevB.54.R11126

Abstract

The optical transition in a β-FeSi2 film has been characterized by photoreflectance. The direct transition has been determined to be at 0.874 eV. Moreover, a direct transition at 0.860 eV has also been observed and might be related to the impurity band. The reflectivity of the β-FeSi2 films was investigated, and a transition near 1.2 eV was observed. Finally, a comparison of spectroscopic ellipsometric measurements on different samples is given.

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