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Observation of a D− triplet transition in GaAs/AlxGa1−xAs multiple quantum wells

S. R. Ryu, Z. X. Jiang, W. J. Li*, and B. D. McCombe

W. Schaff

  • Department of Physics, State University of New York at Buffalo, Buffalo, New York 14260

  • School of Electrical Engineering, Cornell University, Ithaca, New York, 14853

  • *Current address: Biocontrol Technology Inc., 300 Indian Spring Rd., Indiana, PA 15701.

Phys. Rev. B 54, R11086(R) – Published 15 October, 1996

DOI: https://doi.org/10.1103/PhysRevB.54.R11086

Abstract

Far-infrared magnetospectroscopic studies of quasi-two-dimensional donor impurity states have been carried out on several GaAs/Al0.3Ga0.7As multiple-quantum-well samples with different doping densities in the barrier with constant sheet doping in the well. Two distinct features on the low-frequency side of cyclotron resonance (CR) were observed. Extensive temperature- and carrier-density-dependence studies combined with statistical calculations of the occupancy of the various possible states have led to the assignment of these features to a D− triplet transition (∼13 cm−1 lower than CR) and the D02p−−2s transition (∼9 cm−1 lower than CR).

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