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Structure and properties of clean and In-covered Ge(103) surfaces
Phys. Rev. B 54, R11062(R) – Published 15 October, 1996
DOI: https://doi.org/10.1103/PhysRevB.54.R11062
Abstract
Clean and In-covered Ge(103) surfaces have been studied using scanning tunneling microscopy, electron diffraction, and photoemission. At room temperature the clean surface displays a well ordered (4×1) reconstruction, which on heating to ∼ 430°C undergoes a reversible (4×1) ↔ (1×1) phase transition. Atomically resolved scanning tunneling microscopy images indicate that the (4×1) reconstruction involves two atomic layers. After depositing 2 ML of indium and annealing at 150°C the (4×1) reconstruction is removed and a (1×1) structure forms which can be described as an In terminated ideal (103) surface with In atoms saturating all of the Ge surface dangling bonds.