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    Crystal growth and characterization of Cu-intercalated misfit-layer compounds

    Youichi Ohno

    • Department of Electrical and Electronic Engineering, Faculty of Engineering, Utsunomiya University, 2753 Ishii-machi, Utsunomiya 321, Tochigi, Japan

    Phys. Rev. B 54, 11693 – Published 15 October, 1996

    DOI: https://doi.org/10.1103/PhysRevB.54.11693

    Abstract

    Single crystals of CuxCeNb2S5 (x≊0.6) are grown by chemical-vapor-transport reaction of powder mixture of Cu and CeNb2S5. The compound is regarded as a Cu intercalation derivative of a second-stage misfit-layer compound with incommensurate planar intergrowth structure of CeS and Cux(NbS2)2 layers. Two sublattices for CeS and Cux(NbS2)2 layers have a different geometry in the a-b plane although the stacking direction coincides with the c axis. Lattice parameters are a1=5.80 Å, b1=5.80 Å, and c1=17.93 Å for CeS layers and a2=3.35 Å and c2=1.93 Å for Cux(NbS2)2 layers, where a1=√3a2. The composite crystals, which are represented by [CuxCeNb2S5]z[CuyNbS2]1−z, [CuxSmNb2S5]z[CuyNbS2]1−z, and [SnNbS3]z[CuyNbS2]1−z, are also grown by a similar method. The single and the composite crystals are, respectively, formed by regular and irregular stacking of Cu and MS (M=Ce, Sm, and Sn) layers. The electronic structures are studied by means of x-ray photoemission spectroscopy and inner-shell-electron energy-loss spectroscopy methods. © 1996 The American Physical Society.

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