Crystal growth and characterization of Cu-intercalated misfit-layer compounds
Phys. Rev. B 54, 11693 – Published 15 October, 1996
DOI: https://doi.org/10.1103/PhysRevB.54.11693
Abstract
Single crystals of (x≊0.6) are grown by chemical-vapor-transport reaction of powder mixture of Cu and . The compound is regarded as a Cu intercalation derivative of a second-stage misfit-layer compound with incommensurate planar intergrowth structure of CeS and ( layers. Two sublattices for CeS and ( layers have a different geometry in the a-b plane although the stacking direction coincides with the c axis. Lattice parameters are =5.80 Å, =5.80 Å, and =17.93 Å for CeS layers and =3.35 Å and =1.93 Å for ( layers, where =√3. The composite crystals, which are represented by [[, [[, and [[, are also grown by a similar method. The single and the composite crystals are, respectively, formed by regular and irregular stacking of Cu and MS (M=Ce, Sm, and Sn) layers. The electronic structures are studied by means of x-ray photoemission spectroscopy and inner-shell-electron energy-loss spectroscopy methods. © 1996 The American Physical Society.