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    Polarized interacting exciton gas in quantum wells and bulk semiconductors

    J. Fernández-Rossier and C. Tejedor

    L. Muñoz and L. Viña

    • Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain

    • Departamento de Física de Materiales, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain

    Phys. Rev. B 54, 11582 – Published 15 October, 1996

    DOI: https://doi.org/10.1103/PhysRevB.54.11582

    Abstract

    We develop a theory to calculate exciton binding energies of both two- and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the polarization and intensity of the excitation light on the exciton luminescence of GaAs quantum wells. We study the breaking of the spin degeneracy observed at high exciton density (5×1010 cm2). Energy level splitting between spin +1 and spin -1 is shown to be due to many-body interexcitonic exchange while the spin relaxation time is controlled by intraexciton exchange. © 1996 The American Physical Society.

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