Fabrication and physical properties of radio frequency sputtered S thin films
Phys. Rev. B 54, 11555 – Published 15 October, 1996
DOI: https://doi.org/10.1103/PhysRevB.54.11555
Abstract
Highly oriented S thin films with a wurtzite structure were grown by the radio-frequency sputtering technique. The grain size of the S thin films was found to decrease with an increase in the Mn concentration x. Moreover, the lattice softening effect due to the quantum size effect, the band-bowing phenomena accounted for by the band-gap correction arising from the chemical disorder, and the exchange interaction between the band carrier and the d electron of the magnetic Mn ions have been investigated. © 1996 The American Physical Society.