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    Hall factor in strained p-type doped Si1−xGex alloy

    Y. Fu

    K. B. Joelsson

    K. J. Grahn

    W.-X. Ni and G. V. Hansson

    M. Willander

    • Department of Physics, Fysikgränd 3, Göteborg University and Chalmers University of Technology, S-412 96 Göteborg, Sweden

    • Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden

    • VTT Electronics, Post Office Box 11012, FIN-02044 VTT, Finland

    • Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden

    • Department of Physics, Fysikgränd 3, Göteborg University and Chalmers University of Technology, S-412 96 Gotebörg, Sweden

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    Phys. Rev. B 54, 11317 – Published 15 October, 1996

    DOI: https://doi.org/10.1103/PhysRevB.54.11317

    Abstract

    We have calculated the Hall factor in strained p-type Si1−xGex alloy grown on (001) Si, taking into account the detailed valence-band structure. Acoustic-phonon, nonpolar optical-phonon, alloy, and ionized-impurity scattering are included. It is demonstrated experimentally that the Hall factor can be reduced by a factor of 2 when alloying Si with Ge. Theoretically we have shown that the Hall factor is significantly reduced because of the nonparabolic and nonspherical effects in the valence-band structure. The theory explains experimental results very well. It is also shown that the low-temperature Hall factor is independent of scattering mechanisms. It depends only on the energy band structure. © 1996 The American Physical Society.

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    Phys. Rev. B 54, 11317– Published 15 October, 1996
    • Received 9 May 1996

    © 1996 American Physical Society

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