Export citation

Export citation

Choose format for download:

Download Citation

    Single-site approximation for the s-f model in ferromagnetic semiconductors

    Masao Takahashi and Kazuhiro Mitsui

    • Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi, Kanagawa 243-02, Japan

    Phys. Rev. B 54, 11298 – Published 15 October, 1996

    DOI: https://doi.org/10.1103/PhysRevB.54.11298

    Abstract

    The conduction-electron state in a ferromagnetic semiconductor is studied theoretically by applying the coherent-potential approximation to the s-f model. In order to consider multiple scattering at ferromagnetic temperatures, we first derive the t-matrix elements of the s-f exchange interaction for a single f spin embedded in the effective medium, where a conduction electron is subjected to complex potential, Σ↑ or Σ↓, according to the orientation of its spin. Using the mean-field theory for fluctuating f spins, the variation of the density of states with temperature is investigated for various values of IS/W. Here IS is the exchange interaction energy and W is the bandwidth of the conduction band. The anomalous redshift of the optical-absorption edge and the temperature dependence of the electron-spin polarization, experimentally observed in EuO and EuS, can be explained consistently within this approximation. © 1996 The American Physical Society.

    Authorization Required

    We need you to provide your credentials before accessing this content.

    References (Subscription Required)

    Outline

    Information

    Sign In to Your Journals Account

    Filter

    Filter

    Article Lookup

    Enter a citation